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ST72325S6B5(2007) View Datasheet(PDF) - STMicroelectronics

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ST72325S6B5 Datasheet PDF : 196 Pages
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12.8 I/O PORT PIN CHARACTERISTICS
12.8.1 General Characteristics
Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
VIL
Input low level voltage 1)
VIH Input high level voltage 1)
CMOS ports
Vhys Schmitt trigger voltage hysteresis 2)
0.7xVDD
0.7
Injected Current on PB0 (Flash de-
IINJ(PIN)3) vices only)
0
Injected Current on an I/O pin
VDD=5V
ΣIINJ(PIN)3)
Total injected current (sum of all I/O
and control pins)
IL
Input leakage current
VSSVINVDD
IS
Static current consumption
Floating input mode4)
RPU Weak pull-up equivalent resistor 5) VIN=VSS
VDD=5V
400
50
120
CIO I/O pin capacitance
5
tf(IO)out Output high to low level fall time 1) CL=50pF
25
tr(IO)out Output low to high level rise time 1) Between 10% and 90%
25
tw(IT)in External interrupt pulse time 6)
1
Max
0.3xVDD
Unit
V
+4
±4
± 25
±1
250
mA
µA
k
pF
ns
tCPU
Figure 80. Unused I/Os configured as input
VDD
10k
ST7XXX
UNUSED I/O PORT
10k
UNUSED I/O PORT
ST7XXX
Figure 81. Typical IPU vs. VDD with VIN=VSS
90
80
T a= 1 40°C
T a= 9 5°C
70
T a= 2 5°C
60
Ta=-45 °C
50
40
30
20
Note: I/O can be left unconnected if it is configured as output
(0 or 1) by the software. This has the advantage of
greater EMC robustness and lower cost.
10
0
2 2 .5 3 3 .5 4 4 .5 5 5 .5 6
V dd(V )
Notes:
1. Data based on characterization results, not tested in production.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
3. When the current limitation is not possible, the VIN maximum must be respected, otherwise refer to IINJ(PIN) specifica-
tion. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. Refer to section 12.2.2
on page 143 for more details.
4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for
example and leaving the I/O unconnected on the board or an external pull-up or pull-down resistor (see Figure 80). Static
peak current value taken at a fixed VIN value, based on design simulation and technology characteristics, not tested in
production. This value depends on VDD and temperature values.
5. The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics de-
scribed in Figure 81).
6. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external
interrupt source.
159/196

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