DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM32WB35RGQ7TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM32WB35RGQ7TR Datasheet PDF : 193 Pages
First Prev 121 122 123 124 125 126 127 128 129 130 Next Last
Electrical characteristics
STM32WB55xx STM32WB35xx
Table 61. HSI48 oscillator characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
NT jitter
Next transition jitter
Accumulated jitter on 28 cycles(4)
-
PT jitter
Paired transition jitter
Accumulated jitter on 56 cycles(4)
-
-
±0.15(2)
-
±0.25(2)
1. VDD = 3 V, TA = –40 to 125 °C unless otherwise specified.
2. Guaranteed by design.
3. Guaranteed by characterization results.
4. Jitter measurement are performed without clock source activated in parallel.
Max Unit
-
ns
-
Figure 26. HSI48 frequency vs. temperature
%
6
4
2
0
-2
-4
-6
-50
-30
-10
10
30
50
70
90
110
130
Avg
min
°C
max
MSv40989V1
Low-speed internal (LSI) RC oscillator
Table 62. LSI1 oscillator characteristics(1)
Symbol
Parameter
Conditions
Min Typ Max Unit
fLSI
LSI1 frequency
VDD = 3.0 V, TA = 30 °C
31.04 - 32.96
kHz
VDD = 1.62 to 3.6 V, TA = -40 to 125 °C 29.5 - 34
tSU(LSI1)(2) LSI1 oscillator start-up time
-
tSTAB(LSI1)(2) LSI1 oscillator stabilization time 5% of final frequency
- 80 130
μs
- 125 180
IDD(LSI1)(2)
LSI1 oscillator power
consumption
-
- 110 180 nA
1. Guaranteed by characterization results.
2. Guaranteed by design.
128/193
DS11929 Rev 10

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]