Electrical characteristics
STM32WB55xx STM32WB35xx
Table 61. HSI48 oscillator characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
NT jitter
Next transition jitterï€
Accumulated jitter on 28 cycles(4)
-
PT jitter
Paired transition jitterï€
Accumulated jitter on 56 cycles(4)
-
-
±0.15(2)
-
±0.25(2)
1. VDD = 3 V, TA = –40 to 125 °C unless otherwise specified.
2. Guaranteed by design.
3. Guaranteed by characterization results.
4. Jitter measurement are performed without clock source activated in parallel.
Max Unit
-
ns
-
Figure 26. HSI48 frequency vs. temperature
%
6
4
2
0
-2
-4
-6
-50
-30
-10
10
30
50
70
90
110
130
Avg
min
°C
max
MSv40989V1
Low-speed internal (LSI) RC oscillator
Table 62. LSI1 oscillator characteristics(1)
Symbol
Parameter
Conditions
Min Typ Max Unit
fLSI
LSI1 frequency
VDD = 3.0 V, TA = 30 °C
31.04 - 32.96
kHz
VDD = 1.62 to 3.6 V, TA = -40 to 125 °C 29.5 - 34
tSU(LSI1)(2) LSI1 oscillator start-up time
-
tSTAB(LSI1)(2) LSI1 oscillator stabilization time 5% of final frequency
- 80 130
μs
- 125 180
IDD(LSI1)(2)
LSI1 oscillator power
consumption
-
- 110 180 nA
1. Guaranteed by characterization results.
2. Guaranteed by design.
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DS11929 Rev 10