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STM32WB35RCU6 View Datasheet(PDF) - STMicroelectronics

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Description
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STM32WB35RCU6 Datasheet PDF : 193 Pages
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Electrical characteristics
STM32WB55xx STM32WB35xx
Table 75. NRST pin characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL(NRST)
NRST input
low level voltage
VIH(NRST)
NRST input
high level voltage
-
-
-
0.3 x VDD
V
-
0.7 x VDD
-
-
Vhys(NRST)
NRST Schmitt trigger
voltage hysteresis
-
-
200
-
mV
RPU
Weak pull-up
equivalent resistor(2)
VIN = VSS
25
40
55
kΩ
VF(NRST)
NRST input
filtered pulse
-
-
-
VNF(NRST)
NRST input
not filtered pulse
1.71 V ≤ VDD ≤ 3.6 V
350
-
70
ns
-
1. Guaranteed by design.
2.
The pull-up is designed
the series resistance is
mwiitnhimaatrlu(e~1re0s%is)t.ance
in
series
with
a
switchable
PMOS.
This
PMOS
contribution
to
Figure 28. Recommended NRST pin protection
External
reset circuit(1)
NRST(2)
0.1 μF
VDD
RPU
Filter
Internal reset
MS19878V3
1. The reset network protects the device against parasitic resets.
2. TTahbeleus7e5r,motuhsetrewnisseurtehethraetstehtewleillvneol ot nbethteakNeRn SinTtopaincccoaunngtobybethloewdtehveicVeI.L(NRST) max level specified in
3. The external capacitor on NRST must be placed as close as possible to the device.
138/193
DS11929 Rev 10

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