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STM32WB55RGV7TR View Datasheet(PDF) - STMicroelectronics

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Description
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STM32WB55RGV7TR Datasheet PDF : 193 Pages
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STM32WB55xx STM32WB35xx
2
Description
Description
The STM32WB55xx and STM32WB35xx multiprotocol wireless and ultra-low-power
devices embed a powerful and ultra-low-power radio compliant with the Bluetooth® Low
Energy SIG specification v5.0 and with IEEE 802.15.4-2011. They contain a dedicated Arm®
Cortex® -M0+ for performing all the real-time low layer operation.
The devices are designed to be extremely low-power and are based on the high-
performance Arm® Cortex®-M4 32-bit RISC core operating at a frequency of up to 64 MHz.
This core features a Floating point unit (FPU) single precision that supports all Arm®
single-precision data-processing instructions and data types. It also implements a full set of
DSP instructions and a memory protection unit (MPU) that enhances application security.
Enhanced inter-processor communication is provided by the IPCC with six bidirectional
channels. The HSEM provides hardware semaphores used to share common resources
between the two processors.
The devices embed high-speed memories (up to 1 Mbyte of Flash memory for
STM32WB55xx, up to 512 Kbytes for STM32WB35xx, up to 256 Kbytes of SRAM for
STM32WB55xx, 96 Kbytes for STM32WB35xx), a Quad-SPI Flash memory interface
(available on all packages) and an extensive range of enhanced I/Os and peripherals.
Direct data transfer between memory and peripherals and from memory to memory is
supported by fourteen DMA channels with a full flexible channel mapping by the DMAMUX
peripheral.
The devices feature several mechanisms for embedded Flash memory and SRAM: readout
protection, write protection and proprietary code readout protection. Portions of the memory
can be secured for Cortex® -M0+ exclusive access.
The two AES encryption engines, PKA and RNG enable lower layer MAC and upper layer
cryptography. A customer key storage feature may be used to keep the keys hidden.
The devices offer a fast 12-bit ADC and two ultra-low-power comparators associated with a
high accuracy reference voltage generator.
These devices embed a low-power RTC, one advanced 16-bit timer, one general-purpose
32-bit timer, two general-purpose 16-bit timers, and two 16-bit low-power timers.
In addition, up to 18 capacitive sensing channels are available for STM32WB55xx (not on
UFQFPN48 package). The STM32WB55xx also embed an integrated LCD driver up to 8x40
or 4x44, with internal step-up converter.
The STM32WB55xx and STM32WB35xx also feature standard and advanced
communication interfaces, namely one USART (ISO 7816, IrDA, Modbus and Smartcard
mode), one low- power UART (LPUART), two I2Cs (SMBus/PMBus), two SPIs (one for
STM32WB35xx) up to 32 MHz, one serial audio interface (SAI) with two channels and three
PDMs, one USB 2.0 FS device with embedded crystal-less oscillator, supporting BCD and
LPM and one Quad-SPI with execute-in-place (XIP) capability.
The STM32WB55xx and STM32WB35xx operate in the -40 to +105 °C (+125 °C junction)
and -40 to +85 °C (+105 °C junction) temperature ranges from a 1.71 to 3.6 V power supply.
A comprehensive set of power-saving modes enables the design of low-power applications.
The devices include independent power supplies for analog input for ADC.
DS11929 Rev 10
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