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STM32WB55VC View Datasheet(PDF) - STMicroelectronics

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Description
Manufacturer
STM32WB55VC Datasheet PDF : 193 Pages
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STM32WB55xx STM32WB35xx
Electrical characteristics
Table 83. VREFBUF characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Iline_reg
Line regulation
2.8 V ≤ VDDA ≤ 3.6 V
Iload = 500 µA
Iload = 4 mA
-
-
Iload_reg Load regulation 500 μA ≤ Iload ≤4 mA Normal mode
-
-40 °C < TJ < +125 °C
-
TCoeff
Temperature
coefficient
0 °C < TJ < +50 °C
-
200 1000
ppm/V
100
500
50
500 ppm/mA
Tcoeff_
-
vrefint +
50
ppm/ °C
Tcoeff_
-
vrefint +
50
PSRR
tSTART
Power supply
rejection
Start-up time
DC
100 kHz
CL = 0.5 µF(4)
CL = 1.1 µF(4)
CL = 1.5 µF(4)
40
60
-
dB
25
40
-
-
300
350
-
500
650
µs
-
650
800
Control of
maximum DC
IINRUSH
current drive on
VREFBUF_OUT
-
during start-up
phase (5)
-
-
8
-
mA
IDDA
(VREFBUF)
VREFBUF
consumption
from VDDA
Iload = 0 µA
Iload = 500 µA
Iload = 4 mA
-
16
25
-
18
30
µA
-
35
50
1. Guaranteed by design, unless otherwise specified.
2.
In degraded
voltage).
mode,
the
voltage
reference
buffer
cannot
maintain
accurately
the
output
voltage
that
will
follow
(VDDA
-
drop
3. Guaranteed by test in production.
4. The capacitive load must include a 100 nF capacitor in order to cut-off the high frequency noise.
5.
To correctly control
the range [2.4 V to
the
3.6
VREFBUF
V] and [2.8
in-rush current during start-up phase and scaling
V to 3.6 V] respectively for VRS = 0 and VRS = 1.
change,
the
VDDA
voltage
must
be
in
DS11929 Rev 10
153/193
169

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