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CDBQR0230L-HF View Datasheet(PDF) - ComChip

Part Name
Description
Manufacturer
CDBQR0230L-HF
ComChip
ComChip 
CDBQR0230L-HF Datasheet PDF : 4 Pages
1 2 3 4
SMD Schottky Barrier Diode
CDBQR0230L-HF
Io = 200 mA
VR = 30 Volts
RoHS Device
Halogen Free
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
0402/SOD-923F
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BA
-Mounting position: Any.
-Weight: 0.001 gram(approx.).
0.012(0.30) Typ.
0.022(0.55)
0.018(0.45)
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Repetitive peak reverse voltage
Conditions
Symbol Min Typ Max Unit
VRRM
35
V
Reverse voltage
VR
30
V
Average forward current
Forward current,surge peak
Power Dissipation
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IO
IFSM
PD
200 mA
1
A
125 mW
Storage temperature
TSTG
-40
+125
O
C
Junction temperature
Tj
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Forward voltage
Reverse current
Conditions
IF = 200 mA
VR = 10 V
Symbol Min Typ Max Unit
VF
0.5
V
IR
30
uA
QW-G1096
Comchip Technology CO., LTD.
REV:C
Page 1

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