ACE3401 View Datasheet(PDF) - ACE Technology Co., LTD.

Part Name

Description

Manufacturer

ACE3401

P-Channel Enhancement Mode MOSFET

ACE Technology Co., LTD. 

ACE3401

P-Channel Enhancement Mode MOSFET

Packaging Type

SOT-23-3L

3

1

2

SOT-23-3L Description

1

Gate

2

Source

3

Drain

Ordering information

ACE3401 XX + H

Halogen - free

Pb - free

BM: SOT-23-3L

Electrical Characteristics

(TA=25℃, Unless otherwise noted)

Parameter

Symbol

Conditions

Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS

Gate Threshold Voltage

VGS(th)

VGS=0V, ID=-250uA

-30

VDS=VGS, ID=-250uA

-0.4

V

-1.0

Gate Leakage Current

IGSS

VDS=0.V, VGS=±12V

±100 nA

Zero Gate Voltage Drain Current

IDSS

VDS=-24V, VGS=0V

VDS=-24V, VGS=0V TJ=55℃

-1

uA

-10

On-State Drain Current

ID(ON)

VDS≦-5V, VGS=-10V

-10

A

VGS=-10V, ID=-4.0A

0.045 0.055

Drain-Source On-Resistance RDS(ON)

VGS=-4.5V, ID=-3.2A

0.050 0.065 Ω

VGS=-2.5V, ID=-1.2A

0.060 0.075

Forward Transconductance

Gfs

VDS=-5.0V, ID=-4.0A

10

S

Diode Forward Voltage

VSD

IS=-1.0A, VGS=0V

-0.8 -1.2 V

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Qg

Qgs

VDS=-15V, VGS=-10V,

ID≡-4.0A

Qgd

Ciss

VDS=-15V, VGS=0V,

14 21

1.9

nC

3.7

540

pF

VER 1.4 2

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