2N6609 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N6609 Datasheet PDF : 2 Pages
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NPN 2N3773*, PNP 2N6609
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Emitter Breakdown Voltage (Note 4)
(lc = 0.2 Adc, IB = 0)
Collector-Emitter Sustaining Voltage (Note 4)
(lc = 0.1 Adc, VBE(OID = 1-5vdc. RBE = 100 Ohms)
Collector-Emitter Sustaining Voltage
(lc = 0.2 Adc, RBE = 100 Ohms)
Collector Cutoff Current (Note 4)
(VCE=120Vdc, IB =0)
Collector Cutoff Current (Note 4)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1-5 Vdc, Tc = 150'C)
Collector Cutoff Current
(VcB = 140Vdc, IE = 0)
Emitter Cutoff Current (Note 4)
(VBE = 7 Vdc, ic = 0)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(lc = 8 Adc, VCE = 4 Vdc) (Note 4)
(lc = 16Adc,VCE = 4Vdc)
Collector-Emitter Saturation Voltage
(lc = 8 Adc, IB = 800 mAdc) (Note 4)
(lc = 16 Adc, IB = 3.2 Adc)
Base-Emitter On Voltage (Note 4)
(lc = 8 Adc, VCE = 4 Vdc)
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter
Small-Signal, Short-Circuit, Forward Current Transfer Ratio
(lc= 1A, f = 50kHz)
Small-Signal Current Gain (Note 4)
(lc = 1 Adc, VCE = 4 Vdc, f = 1 kHz)
SECOND BREAKDOWN CHARACTERISTICS
Second Breakdown Collector Current with Base Forward Biased
t = 1 s (non-repetitive), VCE = 100 V, See Figure 12
3, Pulse Test: Pulse Width = 300 us, Duty Cycle £ 2%.
4. Indicates JEDEC Registered Data.
Symbol
Min
Max
Unit
VCEO(SUS)
140
-
Vdc
VCEX(SUS)
160
-
Vdc
VCER(5U5)
150
-
Vdc
ICEO
-
10
mAdc
ICEX
mAdc
-
2
10
ICBO
—
2
mAdc
IEBO
-
5
mAdc
HFE
VcE(sat)
VBE(OI)
Ihfel
hfe
-
15
60
5
-
Vdc
-
1.4
-
4
—
2.2
Vdc
4 ""
40
-
-
's/b
1.5
_
Adc
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