STP5NB100FP(2000) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP5NB100FP
(Rev.:2000)
(Rev.:2000)
STMicroelectronics
STP5NB100FP Datasheet PDF : 9 Pages
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STP5NB100/STP5NB100FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on T ime
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 500 V ID = 2.5 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 800 V ID = 5 A VGS = 10 V
SWITCHING OFF
Symbol
tr(Vo f f )
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over T ime
Test Conditions
VDD = 800 V ID = 5 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward O n Voltage
ISD = 5 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 5 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
IRRM Reverse Recovery
Cur ren t
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
24
11
Max.
Un it
ns
ns
39
51
nC
9.6
nC
19.2
nC
Min.
Typ .
20
22
26
Max.
Un it
ns
ns
ns
Min.
Typ .
Max.
5
20
Un it
A
A
1.6
V
780
ns
5.5
µC
14
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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