STP3NB100FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP3NB100FP Datasheet PDF : 6 Pages
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STP3NB100/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on Time
Rise Time
Test Conditions
VDD = 500 V ID = 1.5 A
RG = 4.7 Ω
VGS = 10 V
Qg
Total Gate Charge
VDD = 800 V ID = 3 A VGS = 10 V
Q gs Gat e-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 800V ID = 3 A
RG = 4.7 Ω VGS = 10 V
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 3 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 3 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
TBD
Max.
Unit
ns
ns
21
nC
8
nC
9
nC
Min.
T yp.
TBD
Max.
Unit
ns
ns
ns
Min.
T yp.
Max.
3
12
Unit
A
A
1.6
V
TBD
ns
µC
A
3/6
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