STP80NF10FP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP80NF10FP

N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STP80NF10FP

Electrical characteristics

Table 5. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

Test condictions

VDD = 50V, ID= 40A,

RG = 4.7Ω, VGS=10V

(see Figure 14)

Min. Typ. Max. Unit

40

ns

145

ns

134

ns

115

ns

Table 6. Source drain diode

Symbol

Parameter

Test condictions

Min Typ. Max Unit

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 80A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=80A, VDD = 50V

di/dt = 100A/µs,Tj=150°C

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %

38 A

152 A

1.3 V

155

ns

850

nC

11

A

5/12

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