STP80NF03L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP80NF03L Datasheet PDF : 8 Pages
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STP80NF03L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
30
V
VGS
Gate-source Voltage
± 20
V
ID (#)
Drain Current (continuous) at TC = 25°C
80
A
ID (#)
Drain Current (continuous) at TC = 100°C
80
A
IDM ( ) Drain Current (pulsed)
320
A
PTOT
Total Dissipation at TC = 25°C
300
W
Derating Factor
2.0
W/°C
dv/dt (1) Peak Diode Recovery Voltage Slope
2.0
V/ns
Tstg
Storage Temperature
–65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
(#) Current Limited by Package.
( ) Pulse width limited by safe operating area.
(1) ISD ≤ 80A, di/dt ≤ 240 A/µs, VDD = 24V ; Tj ≤ TJMAX.
ct(s) THERMAL DATA
du Rthj-case Thermal Resistance Junction-case Max
ro Rthj-amb Thermal Resistance Junction-ambient Max
P Tl
Maximum Lead Temperature For Soldering Purpose Typ
0.5
62.5
300
°C/W
°C/W
°C
olete AVALANCHE CHARACTERISTICS
s Symbol
Parameter
Ob IAR
Avalanche Current, Repetitive or Not-Repetitive
- (pulse width limited by Tj max)
) EAS
Single Pulse Avalanche Energy
t(s (starting Tj = 25 °C, ID = IAR, VDD = 20 V)
Max Value
Unit
40
A
2.3
J
duc ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ro OFF/ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
te P V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
30
V
Breakdown Voltage
sole IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C
1
µA
10
µA
ObIGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
1
1.5
2.5
V
RDS(on)
Static Drain-source On VGS = 10 V, ID = 40 A
Resistance
VGS = 4.5 V, ID = 40 A
0.004 0.0045 Ω
0.0045 0.0065 Ω
2/8
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