STP90NF03L(2003) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP90NF03L
(Rev.:2003)

N-CHANNEL 30V - 0.0056Ω - 90A TO-220/I2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

STMicroelectronics 

STP90NF03L/STB90NF03L-1

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR Drain-gate Voltage (RGS = 20 kΩ)

VGS Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM ( ) Drain Current (pulsed)

PTOT Total Dissipation at TC = 25°C

Derating Factor

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

( ) Pulse width limited by safe operating area

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max

Rthj-amb Thermal Resistance Junction-ambient Max

Tl

Maximum Lead Temperature For Soldering Purpose

Value

30

30

±20

90

65

360

150

0.73

–65 to 175

175

Unit

V

V

V

A

A

A

W

W/°C

°C

°C

1

62.5

300

°C/W

°C/W

°C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

ON /OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

30

Breakdown Voltage

IDSS Zero Gate Voltage

VDS = Max Rating

1

Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C

10

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±20V

±100

ID(on) On State Drain Current VDS > ID(on) x RDS(on)max,

90

VGS = 10V

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA

1

2.5

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 45 A

VGS = 5V, ID = 45 A

0.0056

0.007

0.0065

0.012

Unit

V

µA

µA

nA

A

V

Ω

Ω

2/9

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