STP85NF55(2019) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP85NF55
(Rev.:2019)

Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET™ II Power MOSFETs in D²PAK and TO-220 packages

STMicroelectronics 

STB85NF55T4, STP85NF55

Electrical ratings

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage

VGS

Gate-source voltage

Drain current (continuous) at TC = 25 °C

ID(1)

Drain current (continuous) at TC = 100 °C

IDM(2)

Drain current (pulsed)

PTOT

Total power dissipation at TC = 25 °C

Derating factor

EAS(3)

Single-pulse avalanche energy

dv/dt(4)

Peak diode recovery voltage slope

Tstg

Storage temperature range

Tj

Operating junction temperature range

1. Current limited by package.

2. Pulse width limited by safe operating area.

3. Starting TJ = 25 °C, ID = 40 A, VDD = 37.5 V

4. ISD ≤ 80 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX

Symbol

Rthj-case

Rthj-amb

Table 2. Thermal data

Parameter

Thermal resistance junction-case

Thermal resistance junction-ambient

Value

55

±20

80

80

320

300

2.0

980

10

-55 to 175

Unit

V

V

A

A

A

W

W/°C

mJ

V/ns

°C

Value

0.5

62.5

Unit

°C/W

°C/W

DS2569 - Rev 12

page 2/18

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