STP55NF06LFP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP55NF06LFP

N-CHANNEL 60V - 0.014Ω - 55A TO-220/FP/D2PAK/I2PAK STripFET™II POWER MOSFET

STMicroelectronics 

STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1

THERMAL DATA

Rthj-case

Rthj-amb

Tl

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering Purpose

TO-220

D2PAK

I2PAK

1.58

62.5

300

TO-220FP

5.0

°C/W

°C/W

°C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

60

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

nA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250 µA

VGS = 5 V, ID = 27.5 A

VGS = 10V, ID = 27.5 A

Min.

1

Typ.

1.7

0.016

0.014

Max.

0.020

0.018

Unit

V

Ω

Ω

DYNAMIC

Symbol

gfs (1)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS = 15V , ID = 27.5 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

30

1700

300

105

Max.

Unit

S

pF

pF

pF

2/12

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