STP60NF06LFP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP60NF06LFP

N-channel 60V - 0.012Ω- 60A - TO-220/D2PAK/TO-220FP STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

STB60NF06L - STP60NF06L - STP60NF06LFP

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

Zero gate voltage

drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250µA, VGS =0

60

V

VDS = Max rating

VDS = Max rating,

TC = 125°C

1

µA

10

µA

VGS = ± 15V

±100 nA

VDS = VGS, ID = 250µA

1

V

VGS = 5V, ID = 30A

VGS = 10V, ID = 30A

0.014 0.016 Ω

0.012 0.014 Ω

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Forward

transconductance

VDS= 15V, ID = 30A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 30V, ID = 30A

RG = 4.7Ω VGS = 4.5V

(see Figure 15)

Qg

Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 48V, ID = 60A,

VGS = 4.5V, RG = 4.7Ω

(see Figure 16)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Min. Typ. Max. Unit

20

S

2000

pF

360

pF

125

pF

35

ns

220

ns

55

ns

30

ns

35

66

nC

10

nC

20

nC

4/16

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