STP60NE06L-16FP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP60NE06L-16FP

N - CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET™ POWER MOSFET

STMicroelectronics 

STP60NE06L-16

®

STP60NE06L-16FP

N - CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP

STripFET™ POWER MOSFET

TYPE

V DSS

RDS(on)

ID

STP60NE06L-16

60 V < 0.016 Ω 60 A

STP60NE06L-16FP 60 V < 0.016 Ω 35 A

s TYPICAL RDS(on) = 0.014 Ω

s AVALANCHE RUGGED TECHNOLOGY

s LOW GATE CHARGE

s HIGH CURRENT CAPABILITY

s 175 oC OPERATING TEMPERATURE

s LOW THRESHOLD DRIVE

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronis unique ”Single Feature Size™”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remarka-

ble manufacturing reproducibility.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SOLENOID AND RELAY DRIVERS

s DC-DC & DC-AC CONVERTERS

s AUTOMOTIVE ENVIRONMENT

3

2

1

TO-220

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Sy mb o l

Parameter

V DS

V DGR

VGS

ID

ID

IDM (•)

Ptot

Drain-source Volt age (VGS = 0)

Drain- gat e Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Tot al Dissipation at Tc = 25 oC

Derating Factor

VISO Insulation Withstand Voltage (DC)

dv/dt Peak Diode Recovery voltage slope

Ts tg Storage Temperature

Tj Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

May 2000

Value

Unit

STP60NE06L-16 STP60NE06L-16FP

60

V

60

V

± 15

V

60

35

A

42

24

A

240

140

A

150

45

W

1

0.3

W /o C



2000

V

6

-65 to 175

175

( 1) ISD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

V/ ns

oC

oC

1/9

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