STP45NF06L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP45NF06L Datasheet PDF : 10 Pages
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STP45NF06L
STB45NF06L
N-CHANNEL 60V - 0.022Ω - 38A TO-220 / D2PAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STP45NF06L
STB45NF06L
60 V
60 V
< 0.028Ω
< 0.028Ω
s TYPICAL RDS(on) = 0.022Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOGIC LEVEL GATE DRIVE
ID
38 A
38 A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
3
1
D2PAK
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
September 2002
Value
60
60
±16
38
26
152
80
0.53
7
Unit
V
V
V
A
A
A
W
W/°C
V/ns
–55 to 175
°C
(1) ISD ≤38A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/10
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