STP30NE06FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP30NE06FP
STMicroelectronics
STP30NE06FP Datasheet PDF : 6 Pages
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STP30NE06/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Qg
Qgs
Qgd
P ar am et e r
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V
RG =4.7Ω
VDD = 48 V
ID = 15 A
VGS = 10 V
ID = 30 A VGS = 10 V
Min.
Typ.
18
95
35
10
13
Max.
50
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 30 A
RG =4.7 Ω VGS = 10 V
Min.
Typ.
10
41
60
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 30 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 30 A
VDD = 30 V
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
30
120
Unit
A
A
1.5
V
85
ns
0.19
µC
4.5
A
3/6
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