STY16NA90 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STY16NA90
STMicroelectronics
STY16NA90 Datasheet PDF : 5 Pages
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STY16NA90
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-Heatsink
with Conductive Grease
Max
Max
Typ
0.42
40
0.05
oC/ W
oC/ W
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e
16
3000
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA
VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
900
Typ. Max.
50
500
± 100
Unit
V
µA
µA
nA
ON (∗)
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 8 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
2.25
Typ .
3
Max.
3.75
Unit
V
0.5 0.54
Ω
Ω
16
A
DYNAMIC
S ymb ol
gfs (∗)
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 8 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
15
Typ .
Max.
Unit
S
6400 8300 pF
600 750 pF
150 200 pF
2/5
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