M29W008B-100N6TR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M29W008B-100N6TR

8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory

STMicroelectronics 

M29W008T, M29W008B

Figure 11. Data Polling Flowchart

START

READ DQ5 & DQ7

at VALID ADDRESS

DQ7

=

YES

DATA

NO

NO DQ5

=1

YES

READ DQ7

DQ7

=

YES

DATA

NO

FAIL

PASS

AI01369

Figure 12. Data Toggle Flowchart

START

READ

DQ2, DQ5 & DQ6

DQ2=, DQ6 NO

TOGGLE

YES

NO DQ5

=1

YES

READ DQ2, DQ6

DQ2=, DQ6 NO

TOGGLE

YES

FAIL

PASS

AI01873

Table 18. Program, Erase Times and Program, Erase Endurance Cycles

(TA = 0 to 70°C; VCC = 2.7V to 3.6V)

Parameter

M29W008T / M29W008B

Min

Typ

Typical after

100k W/E Cycles

Max

Chip Erase (Preprogrammed)

5

3.3

Chip Erase

12

Boot Block Erase

2.4

Parameter Block Erase

2.3

Main Block (32Kb) Erase

2.7

Main Block (64Kb) Erase

3.3

15

Chip Program (Byte)

8

8

Byte Program

10

10

Program/Erase Cycles (per Block)

100,000

Unit

sec

sec

sec

sec

sec

sec

sec

µs

cycles

26/30

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