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Part Name
Description
BSP320 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BSP320
SIPMOS® Small-Signal-Transistor
Infineon Technologies
BSP320 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
BSP 320S
Avalanche Energy
E
AS
=
f
(
T
j
)
parameter:
I
D
= 2.9 A,
V
DD
= 25 V
R
GS
= 25
Ω
65
mJ
55
50
45
40
35
30
25
20
15
10
5
0
20
40
60
80 100 120
ËšC
160
T
j
Drain-source breakdown voltage
V
(BR)DSS
= f (
T
j
)
Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D puls
=2.9A
BSP320S
16
V
12
10
8
0,2
V
DS max
6
4
2
0
02468
0,8
V
DS max
10 12
nC
15
Q
Gate
BSP320S
72
V
68
66
64
62
60
58
56
54
-60 -20
20
60 100
ËšC
180
T
j
Data Sheet
8
05.99
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