ACS253KMSR-02 View Datasheet(PDF) - Intersil

Part Name

Description

Manufacturer

ACS253KMSR-02

Radiation Hardened Dual 4-Input Multiplexer with Three-State Outputs

Intersil 

ACS253MS

Die Characteristics

DIE DIMENSIONS:

Size: 2390µm x 2390µm (94 mils x 94 mils)

Thickness: 525µm ±25µm (20.6 mils ±1 mil)

Bond Pad: 110µm x 110µm (4.3 mils x 4.3 mils)

METALLIZATION:

Type: Al

Metal 1 Thickness: 0.7µm ±0.1µm

Metal 2 Thickness: 1.0µm ±0.1µm

SUBSTRATE

Silicon on Sapphire (SOS)

SUBSTRATE POTENTIAL:

Unbiased Insulator

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Type: Phosphorous Silicon Glass (PSG)

Thickness: 1.30µm ±0.15µm

SPECIAL INSTRUCTIONS:

Bond VCC First

ADDITIONAL INFORMATION:

Worst Case Density: <2.0 x 105 A/cm2

Transistor Count: 140

Metallization Mask Layout

ACS253MS

S1

10E

VCC

20E

1I 3

S0

1I 2

2I 3

1I 1

2I 2

1T 0

2I 1

1Y

GND

2Y

2I 0

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