MAX8597ETP(2004) View Datasheet(PDF) - Maxim Integrated

Part Name

Description

Manufacturer

MAX8597ETP
(Rev.:2004)

Low-Dropout, Wide-Input-Voltage, Step-Down Controllers

Maxim Integrated 

Low-Dropout, Wide-Input-Voltage,

Step-Down Controllers

ELECTRICAL CHARACTERISTICS (continued)

(VV+ = VVL = VAVL = VEN = VREFIN = 5V, VBST = 6V, VLX = 1V, CVL = 4.7µF, CREFOUT = 1µF, VAIN- = VAOUT, VAIN+ = 2.5V, VILIM =

VLX - 0.2V, VFB = 0.65V, GND = PGND = 0V, CSS = 0.01µF, RFREQ = 20kΩ, TA = 0°C to +85°C, typical values are at TA = +25°C,

unless otherwise noted.)

PARAMETER

CONDITIONS

DH Minimum Off-Time

DH Minimum On-Time

FB ERROR AMPLIFIER

FB Input Bias Current

FB Input Voltage Set Point

Over load and line

FB Offset Error

VREFIN = 1.25V and 2.5V, measured with respect to REFIN

Error-Amp Open-Loop Voltage

Gain

VCOMP = 1.2V to 2.4V

Slew Rate

CLOAD = 80pF

UNCOMMITTED OPERATIONAL AMPLIFIER (MAX8597 only)

Open-Loop Voltage Gain (AVOL)

RLOAD = 100kΩ

RLOAD = 10kΩ

Output-Voltage Swing High

VAIN+ = 2.5V, VAIN- = (VAIN+ - 100mV), ISOURCE = 100µA

Output-Voltage Swing Low

Unity-Gain BW

Phase Margin

Slew Rate

Input Offset Voltage

Input Leakage Current

VAIN+ = 2.5V, VAIN- = (VAIN+ + 100mV), ISINK = 100µA

CLOAD = 10pF, RLOAD = 10kΩ to 100kΩ

CLOAD = 100pF, RLOAD = 10kΩ to 100kΩ

CLOAD = 100pF

VCM = 1.25V and 2.5V

Input Common-Mode Range

(CMVR)

Common-Mode Rejection Ratio

(CMRR)

DRIVERS

DH, DL Break-Before-Make Time

DH On-Resistance in Low State

DH On-Resistance in High State

DL On-Resistance in Low State

DL On-Resistance in High State

BST Bias Current

LX Bias Current

BST/LX Leakage Current

LOGIC INPUTS (EN)

Input Low Level

Input High Level

Input Bias Current

CLOAD = 2000pF

VBST - VLX = 5V

VBST - VLX = 5V

VVL = VV+ = 5V

VVL = VV+ = 5V

VBST = 33V, VLX = 28V, VEN = 0V

VBST = 33V, VLX = 28V, VEN = 0V

VBST = VLX = 28V, VEN = 0V

4.5V < VVL = VV+ = VAVL < 5.5V

4.5V < VVL = VV+ = VAVL < 5.5V

VVL = VV+ = VAVL = 5.5V, VEN = 0 to 5.5V

MIN TYP MAX UNITS

180 200 220

ns

115 140

ns

100

nA

0.594 0.600 0.606

V

+10

-10

mV

72

90

dB

18

V/µs

90

dB

70

VAVL -

V

20mV

20

mV

1.5

MHz

+80

D egr ees

+40

3.5

V/µs

-3

+3

mV

-10

+10

nA

+0.50

VAVL -

V

2.0

75

dB

20

ns

1.0 2.5

Ω

1.5 3.3

Ω

0.45 1.0

Ω

1.3 2.5

Ω

230 520

µA

-230 -520 µA

50

µA

1.14 0.80

V

2.40 1.73

V

-1

+1

µA

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