PBSS8110Z,115 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

PBSS8110Z,115

100 V, 1 A NPN low VCEsat (BISS) transistor

NXP Semiconductors. 

PBSS8110Z

100 V, 1 A NPN low VCEsat (BISS) transistor

Rev. 02 — 8 January 2007

Product data sheet

1. Product profile

1.1 General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)

small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS9110Z.

1.2 Features

I Low collector-emitter saturation voltage VCEsat

I High collector current capability IC and ICM

I High collector current gain (hFE) at high IC

I High efficiency due to less heat generation

I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

I High-voltage DC-to-DC conversion

I High-voltage MOSFET gate driving

I High-voltage motor control

I High-voltage power switches (e.g. motors, fans)

I Automotive applications

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

VCEO

IC

ICM

collector-emitter voltage

collector current

peak collector current

RCEsat collector-emitter

saturation resistance

[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

Conditions

open base

single pulse;

tp ≤ 1 ms

IC = 1 A;

IB = 100 mA

Min Typ Max

-

-

100

-

-

1

-

-

3

[1] -

160 200

Unit

V

A

A

mΩ

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