PDTA123JMB View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

PDTA123JMB

PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

NXP Semiconductors. 

PDTA123JMB

PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

Rev. 1 — 16 May 2012

Product data sheet

1. Product profile

1.1 General description

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3

(SOT883B) Surface-Mounted Device (SMD) plastic package.

NPN complement: PDTC123JMB.

1.2 Features and benefits

 100 mA output current capability

 Reduces component count

 Built-in bias resistors

 Reduces pick and place costs

 Simplifies circuit design

 AEC-Q101 qualified

 Leadless ultra small SMD plastic

package

 Low package height of 0.37 mm

1.3 Applications

 Low-current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors

in digital applications

 Mobile applications

1.4 Quick reference data

Table 1.

Symbol

VCEO

IO

R1

R2/R1

Quick reference data

Parameter

collector-emitter

voltage

output current

bias resistor 1 (input)

bias resistor ratio

Conditions

open base

Tamb = 25 °C

Min Typ Max Unit

-

-

-50 V

-

-

1.54 2.2

17 21

-100 mA

2.86 kΩ

26

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