2N7002P,215 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
2N7002P,215 Datasheet PDF : 16 Pages
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NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
0.7
ID VGS = 4.5 V
(A)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
1.0
Tamb = 25 °C
017aaa017
4.0 V
3.5 V
3.0 V
2.75 V
2.5 V
2.0
3.0
4.0
VDS (V)
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical
values
10.0
RDSon
(Ω)
7.5
017aaa019
(1)
(2)
10−3
ID
(A)
10−4
10−5
017aaa018
(1)
(2)
(3)
10−6
0
1
2
3
VGS (V)
Tamb = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
6.0
RDSon
(Ω)
4.0
017aaa020
5.0
2.5
(3)
(4)
(5)
0.0
0.0
0.2
0.4
0.6
0.8
1.0
ID (A)
(1)
2.0
(2)
0.0
0.0
2.0
4.0
6.0
8.0
10.0
VGS (V)
Tamb = 25 °C
(1) VGS = 3.25 V
(2) VGS = 3.5 V
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
ID = 500 mA
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
2N7002P_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
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