Nexperia
PMK50XP
P-channel TrenchMOS extremely low level FET
104
C
(pF)
103
102
03aq08
Ciss
Coss
Crss
20
-IS
(A)
15
10
5
003aab278
150 °C
Tj = 25 °C
10
10-1
1
10
102
-VDS (V)
VGS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
0
0
0.5
1
1.5
-VSD (V)
VGS = 0 V
Fig 14. Source current as a function of source-drain
voltage; typical values
PMK50XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 April 2010
© Nexperia B.V. 2017. All rights reserved
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