PD57070STR-E(2006) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

PD57070STR-E
(Rev.:2006)

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

STMicroelectronics 

Test circuit

PD57070-E, PD57070S-E

Table 6. Test circuit component part list

Component

Description

L1,L2

INDUCTOR, 5 TURNS AIR WOUND #22AWG, ID 0.059{1.49}, NYLON

COATED MAGNET WIRE

FB1,FB2

R1

R2

R3

SHIELD BEAD SURFACE MOUNT EMI

18 kΩ, 1 W SURFACE MOUNT CHIP RESISTOR

4.7 MΩ, 1 W SURFACE MOUNT CHIP RESISTOR

120 Ω, 2 W SURFACE MOUNT CHIP RESISTOR

C1,C2

3 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR

C3,C10,C11,C15 47 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR

C4,C9

0.8-8.0 pF GIGA TRIM VARIABLE CAPACITOR

C5,C6,C7,C8 7.5 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR

C12

C13,C17

C14

C16

C18

BOARD

1000 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR

0.1 µF, 500 V SURFACE MOUNT CERAMIC CHIP CAPACITOR

10 µF, 50 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR

100 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR

220 µF, 63 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR

ROGER, ULTRA LAM 2000, THK 0.030”, εr = 2.55 2oz. ED Cu 2 SIDES.

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