ACST8-8CT View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ACST8-8CT Datasheet PDF : 10 Pages
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ACST8
Table 2: Absolute Ratings (limiting values)
Symbol
Parameter
Value Unit
TO-220FPAB Tcase = 90°C
8
IT(RMS)
RMS on-state current full cycle sine
wave 50 to 60 Hz
TO-220AB /
D2PAK
Tcase = 100°C
8
A
ITSM
I2t
Non repetitive surge peak on-state current
Tj initial = 25°C, full cycle sine wave
Thermal constraint for fuse selection
tp = 20ms
tp = 16.7ms
tp = 10ms
80
A
85
A
35
A2s
dI/dt
Non repetitive on-state current critical rate of rise
IG = 10mA (tr < 100ns)
VPP Non repetitive line peak pulse voltage
Tstg Storage temperature range
Tj Operating junction temperature range
Tl Maximum lead soldering temperature during 10s
Rate period > 1mn
100
A/µs
note 1
2
kV
- 40 to + 150 °C
- 40 to + 125 °C
260
°C
Note 1: according to test described by IEC61000-4-5 standard & figure A.
Table 3: Gate Characteristics (maximum values)
Symbol
Parameter
PG (AV)
PGM
IGM
Average gate power dissipation
Peak gate power dissipation (tp = 20µs)
Peak gate current (tp = 20µs)
Value
Unit
0.1
W
10
W
1
A
Table 4: Thermal Resistance
Symbol
Parameter
Rth(j-a)
Rth(j-a)
Rth(j-c)
Rth(j-c)
Junction to ambient
TO-220FPAB
TO-220AB
Junction to ambien (soldered on 1 cm2 copper pad) D2PAK
Junction to case for full cycle sine wave conduction TO-220FPAB
Junction to case for full cycle sine wave conduction
TO-220AB
D2PAK
Value
60
45
3.5
2.5
Unit
°C/W
°C/W
°C/W
°C/W
Table 5: Parameter Description
Parameter Symbol
Parameter description
IGT
Gate triggering current
VGT
Gate triggering voltage
VGD
Non triggering voltage
IH
Holding current
IL
Latching current
VTM
On state voltage
VT0
On state characteristic threshold voltage
Rd
On state characteristic dynamic resistance
IDRM / IRRM
Forward or reverse leakage current
dV/dt
Static pin OUT voltage rise
(dI/dt)c
Turn off current rate of decay
VCL
Avalanche voltage at turn off
2/10
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