155N3H6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

155N3H6

N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK STripFET™ VI DeepGATE™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB155N3H6, STD155N3H6

(TCASE = 25 °C unless otherwise specified)

Table 5. Static

Symbol

Parameter

V(BR)DSS

Drain-source breakdown

Voltage

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage drain

current (VGS = 0)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

ID = 250 µA, VGS= 0

VDS = 20 V

VDS = 20 V,Tc = 125 °C

VGS = ± 20 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 40 A

Min. Typ.

30

2

2.5

Max. Unit

V

1 µA

100 nA

±100 nA

4

V

3.0 mΩ

Table 6.

Symbol

Dynamic

Parameter

Ciss

Coss

Crss

Qg

Qgs

Qgd

RG

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

Intrinsic gate resistance

Test conditions

VDS = 25 V, f=1 MHz,

VGS = 0

VDD = 15 V, ID = 80 A

VGS = 10 V

Figure 14

f = 1 MHz open drain

Min Typ. Max. Unit

3650

pF

-

765

- pF

390

pF

62

nC

-

17

- nC

16

nC

-

1.5

-

Ω

4/

Doc ID 018793 Rev 2

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