STD18N65M5(2012) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD18N65M5
(Rev.:2012)

N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB18N65M5, STD18N65M5

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

VDS = 650 V

drain current (VGS = 0) VDS = 650 V, TC=125 °C

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

Gate threshold voltage VDS = VGS, ID = 250 µA

Static drain-source on-

resistance

VGS = 10 V, ID = 7.5 A

Min. Typ. Max. Unit

650

V

1 µA

100 µA

± 100 nA

3

4

5

V

0.198 0.22 Ω

Table 6.

Symbol

Dynamic

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

1240

pF

-

32

- pF

3.2

pF

Co(tr)(1)

Co(er)(2)

Equivalent

capacitance time

related

Equivalent

capacitance energy

related

VDS = 0 to 520 V, VGS = 0

-

99

- pF

-

30

- pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

3

-

Ω

Qg Total gate charge

VDD = 520 V, ID = 7.5 A,

Qgs Gate-source charge VGS = 10 V

Qgd Gate-drain charge

(see Figure 18)

31

nC

-

8

- nC

14

nC

1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

4/18

Doc ID 023446 Rev 1

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