VND10N06-E View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

VND10N06-E

"OMNIFET" fully autoprotected Power MOSFET

STMicroelectronics 

Electrical specifications

VND10N06 / VND10N06-1

Table 7. Dynamic

Symbol

Parameter

COSS Output capacitance

Test conditions

VDS = 13V; f = 1MHz; VIN = 0V

Min. Typ. Max. Unit

350 500 pF

Table 8. Source Drain diode

Symbol

Parameter

Test conditions

VSD(1)

trr(2)

Qrr(2)

IRRM(2)

Forward on voltage

ISD = 1 A; VIN = VIL

Reverse recovery time

Reverse recovery

charge

Reverse recovery

current

ISD = 1A; di/dt = 100 A/µs

VDD = 30V; Tj = 25°C

(see Figure 4)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.

2. Parameters guaranteed by design / characterization.

Min. Typ. Max. Unit

0.8 1.6 V

125

ns

0.22

µC

3.5

A

Table 9.

Symbol

Protections (-40°C < Tj < 150°C, unless otherwise specified)

Parameter

Test conditions

Min. Typ. Max. Unit

Ilim Drain current limit

VIN = 7V; VDS=13V

6

tdlim(1)

Step response current

limit

VIN = 7 V; VDS step from 0 to 13V

10 15 A

12 20 µs

Tjsh(1)

Overtemperature

shutdown

150

°C

Tjrs(1) Overtemperature reset

135

°C

Eas (1)

Single pulse

avalanche energy

Starting Tj = 25°C; VDD = 24V

250

VIN = 7V Rgen = 1kΩ; L = 10mH

mJ

1. Parameters guaranteed by design / characterization.

Figure 2. Switching waveforms

8/25

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