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ES3A thru ES3D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL ES3A
Maximum instantaneous
forward voltage
3.0 A
VF (1)
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C
IR
TA = 100 °C
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
Maximum reverse recovery time
IF = 3.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
TJ = 25 °C
TJ = 100 °C
trr
Maximum stored charge
IF = 3.0 A, VR = 30 V,
TJ = 25 °C
dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 100 °C
Qrr
Typical junction capacitance
4.0 V, 1 MHz
CJ
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
ES3B ES3C
0.90
10
500
20
30
50
15
35
45
ES3D
UNIT
V
µA
ns
ns
nC
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ES3A
Typical thermal resistance
RJA (1)
RJL (1)
Note
(1) Units mounted on PCB with 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pad areas
ES3B
ES3C
47
12
ES3D
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
ES3D-M3/57T
0.211
57T
ES3D-M3/9AT
0.211
9AT
BASE QUANTITY
850
3500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
3.0
2.0
1.0
Resistive or Inductive Load
P.C.B. Mounted on
0.31" x 0.31" (8.0 mm x 8.0 mm)
Copper Pad Areas
0
80 90 100 110 120 130 140 150
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
150
8.3 ms Single Half Sine-Wave
125
at TL = 100 °C
100
75
50
25
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 23-Mar-12
2
Document Number: 88479
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