STM8S105S6B3C(2015) Ver la hoja de datos (PDF) - STMicroelectronics

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STM8S105S6B3C
(Rev.:2015)

Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbyte Flash, integrated EEPROM, 10-bit ADC, timers, UART, SPI, I²C

STMicroelectronics 

STM8S105x4/6

Electrical characteristics

10.3.6 I/O port pin characteristics

General characteristics

Subject to general operating conditions for VDD and TA unless otherwise specified. All

unused pins must be kept at a fixed voltage, using the output mode of the I/O for example or

an external pull-up or pull-down resistor.

Table 37. I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL

VIH

Vhys

Rpu

tR, tF

tR, tF

Ilkg

Input low level voltage

Input high level voltage

Hysteresis(1)

Pull-up resistor

Rise and fall time

(10% - 90%)

Rise and fall time

(10% - 90%)

Digital input leakage

current

VDD = 5 V

VDD = 5 V, VIN = VSS

Fast I/Os

Load = 50 pF

Standard and high sink I/Os

Load = 50 pF

Fast I/Os

Load = 20 pF

Standard and high sink I/Os

Load = 20 pF

-0.3 V

0.7 x VDD

-

30

-

-

-

-

VSS VIN VDD

-

-

0.3 x VDD

V

-

VDD + 0.3 V

700

-

mV

55

80

k

-

35(2)

ns

-

125(2)

-

20(2)

ns

-

50(2)

-

±1(3)

µA

Ilkg ana

Analog input leakage

current

VSS VIN VDD

-

Ilkg(inj)

Leakage current in

adjacent I/O

Injection current ±4 mA

-

-

±250(3)

nA

-

±1(3)

µA

1. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.

2. Data guaranteed by design.

3. Data based on characterization results, not tested in production

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