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STM32F100V6T7BTR Ver la hoja de datos (PDF) - STMicroelectronics

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STM32F100V6T7BTR Datasheet PDF : 96 Pages
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STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
Figure 32. ADC accuracy characteristics
4095
4094
4093
7
6
5
4
3
2
1
[1LSBIDEAL
=VREF+
4096
(or
VDDA depending
4096
on
package)]
EG
(2)
ET
(3)
(1)
EO
EL
ED
1 LSBIDEAL
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
0
1234567
VSSA
4093 4094 4095 4096
VDDA
ai14395b
Figure 33. Typical connection diagram using the ADC
RAIN(1) AINx
VAIN
Cparasitic
VDD
VT
0.6 V
VT
0.6 V
STM32F10xxx
Sample and hold ADC
converter
RADC(1) 12-bit
converter
IL±1 µA
CADC(1)
ai14139d
1. Refer to Table 42 for the values of RAIN, RADC and CADC.
2.
Cpapdaracsaitpicarceitparnecseen(rtsouthgehlcya7papcFi)ta. nAcheigohf
this, fADC should be reduced.
the PCB
Cparasitic
(dependent on soldering and PCB layout quality) plus the
value will downgrade conversion accuracy. To remedy
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 34 or Figure 35,
depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be
ceramic (good quality). They should be placed them as close as possible to the chip.
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