R5F10366DNA-U0 Ver la hoja de datos (PDF) - Renesas Electronics

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R5F10366DNA-U0

RENESAS MCU True Low Power Platform (as low as 63 μA/MHz), 1.8V to 5.5V operation, 2 to 16 Kbyte Flash, 31 DMIPS at 24MHz, for General Purpose Applications

Renesas Electronics 

RL78/G12

3. ELECTRICAL SPECIFICATIONS (G: TA = −40 to +105°C)

3.7 Data Memory STOP Mode Low Supply Voltage Data Retention Characteristics

(TA = −40 to +105°C, VSS = 0 V)

Parameter

Symbol

Data retention supply voltage

VDDDR

Conditions

MIN.

TYP. MAX.

Unit

1.44 Note

5.5

V

Note The value depends on the POR detection voltage. When the voltage drops, the data is retained before a POR

reset is affected, but data is not retained when a POR reset is affected.

STOP mode

Data retention mode

Operation mode

VDD

STOP instruction execution

Standby release signal

(interrupt request)

VDDDR

3.8 Flash Memory Programming Characteristics

(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)

Parameter

Symbol

Conditions

System clock frequency

fCLK

Code flash memory rewritable times Cerwr

Notes 1, 2, 3

Retained for 20 years TA = 85°C

Data flash memory rewritable times

Notes 1, 2, 3

Retained for 1 year

Retained for 5 years

Retained for 20 years

TA = 25°C

TA = 85°C

TA = 85°C

MIN.

1

1,000

TYP.

MAX. Unit

24 MHz

Times

1,000,000

100,000

10,000

Notes 1.

2.

3.

1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the

rewrite.

When using flash memory programmer and Renesas Electronics self programming library

These are the characteristics of the flash memory and the results obtained from reliability testing by

Renesas Electronics Corporation.

R01DS0193EJ0200 Rev.2.00

Sep 06, 2013

Page 102 of 106

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