2SC3182 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

2SC3182

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= 2.0V(Max.) @IC= 7A

·Good Linearity of hFE

·Complement to Type 2SA1265

APPLICATIONS

·Power amplifier applications

·Recommend for 70W high fidelity audio frequency

amplifier output stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

140

V

VCEO

Collector-Emitter Voltage

140

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

10

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

1

A

100

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

2SC3182

SPTECH website：www.superic-tech.com

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