STM32WB55RGQ6TR Ver la hoja de datos (PDF) - STMicroelectronics

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Fabricante

STM32WB55RGQ6TR

Multiprotocol wireless 32-bit MCU Arm®-based Cortex®-M4 with FPU, Bluetooth® 5 and 802.15.4 radio solution

STMicroelectronics 

Electrical characteristics

STM32WB55xx STM32WB35xx

Symbol

Table 27. RF transmitter BLE characteristics (2 Mbps)(1)

Parameter

Test conditions

Min Typ Max Unit

Prf

Pband

BW6dB

IBSE

fd

maxdr

fo

∆f1

Maximum output power

0 dBm output power

SMPS Bypass or ON

V(VDFDBS>M1P.S95=V1).(72)V and

SMPS Bypass or ON

V(VDFDBS>M1P.S71=V1).,4CVodaend29(2)

-

- 6.0

- 3.7

-0

Minimum output power

-

- -20

Output power variation over the band Tx = 0 dBm - Typical

-0.5 -

6 dB signal bandwidth

In band spurious emission

4 MHz

5 MHz

≥ 6 MHz

Tx = maximum output power

Bluetooth® Low Energy: -20 dBm

Bluetooth® Low Energy: -20 dBm

Bluetooth® Low Energy: -30 dBm

- 670

- -56

- -57

-58

Frequency drift

Maximum drift rate

Frequency offset

Frequency deviation average

Bluetooth® Low Energy: ±50 kHz -50 -

Bluetooth® Low Energy:

±20 kHz / 50 µs

-20 -

Bluetooth® Low Energy: ±150 kHz -150 -

Bluetooth® Low Energy: 

between 450 and 550 kHz

450 -

-

- dBm

-

-

0.4 dB

- kHz

-

- dBm

50 kHz

20

kHz/

50 µs

150

kHz

550

∆fa

OBSE(3)

Frequency deviation

∆f2 (average) / ∆f1 (average)

Out of band

spurious emission

< 1 GHz

≥ 1 GHz

Bluetooth® Low Energy:> 0.80

-

-

0.80 -

-

-

- -61 -

dBm

- -46 -

1. Measured in conducted mode, based on reference design (see AN5165), using output power specific external RF filter and

impedance matching networks to interface with a 50 Ω antenna.

2. SVMFBPSSMPoSnaSnTdMV3D2DWmBuSstebrieessemt itcorodcifofenrteronltlevrosl,taagveaillaebvelelso,ndewpwewn.dsitn.cgoump)o.n the desired TX signal (see AN5246 Usage of

3. Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440

Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

90/193

DS11929 Rev 10

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