2N7002-215 Ver la hoja de datos (PDF) - NXP Semiconductors.
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2N7002-215 Datasheet PDF : 13 Pages
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2N7002
60 V, 300 mA N-channel Trench MOSFET
Rev. 7 — 8 September 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Suitable for logic level gate drive
sources
Very fast switching
Surface-mounted package
Trench MOSFET technology
1.3 Applications
Logic level translators
High-speed line drivers
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot
total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
25 °C ≤ Tj ≤ 150 °C
VGS = 10 V; Tsp = 25 °C; see Figure 1;
see Figure 3
Tsp = 25 °C; see Figure 2
VGS = 10 V; ID = 500 mA; Tj = 25 °C;
see Figure 6; see Figure 8
2. Pinning information
Min Typ Max Unit
-
-
60 V
-
-
300 mA
-
-
0.83 W
-
2.8 5
Ω
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
gate
S
source
D
drain
Simplified outline
3
1
2
SOT23 (TO-236AB)
Graphic symbol
D
G
mbb076 S
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