BTW69-1200N(2013) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
BTW69-1200N Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
BTW69-1200N
Symbol
Table 2. Absolute maximum ratings (limiting values)
Parameter
Value Unit
IT(RMS)
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
VGM
On-state current rms (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
I²t Value
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
Gate supply: IG = 100 mA, dIG/dt = 1 A/µs
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
Tc = 102 °C
Tc = 102 °C
Tj = 25 °C
Tj = 25 °C
50
31
763
700
2450
100
Tj = 125 °C
8
Tj = 125 °C
1
- 40 to + 150
- 40 to + 125
5
A
A
A
A2S
A/µs
A
W
°C
V
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Value
Unit
IGT
VGT
VGD
IH
IL
tgt
dV/dt
tq
VTM
Vt0
RD
IDRM
IRRM
VD = 12 V, RL = 33
VD = VDRM, RL = 3.3 k
Tj = 125 °C
IT = 500 mA, gate open
IG = 1.2 x IGT
IT = 50 A, VD = VDRM, IG = 200 mA, dIG/dt = 0.2 A/µs
VD = 67% VDRM, gate open
Tj = 125 °C
VD = 800 V, ITM = 50 A, VR = 75 V,
tp = 100 µs, dITM/dt = 30 A/µs,
dVD/dt = 20 V/µs
Tj = 125 °C
ITM = 100 A, tp = 380 µs
Tj = 25 °C
Threshold voltage
Tj = 125 °C
Dynamic resistance
Tj = 125 °C
VD = VDRM
VR = VRRM
Tj = 25 °C
Tj = 125 °C
MIN.
MAX.
MAX.
MIN.
MAX.
TYP.
TYP.
MIN.
TYP.
MAX.
MAX.
MAX.
MAX.
8
50
1.3
0.2
100
125
2
1000
100
1.6
0.9
8.5
10
5
mA
V
V
mA
mA
µs
V/µs
µs
V
V
m
µA
mA
2/9
DocID024685 Rev 1
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