STW40N20(2005) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STW40N20
(Rev.:2005)
(Rev.:2005)
STMicroelectronics
STW40N20 Datasheet PDF : 13 Pages
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STB40N20 - STP40N20 - STW40N20
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 1mA, VGS = 0
200
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2
3
4
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 20 A
0.038 0.045
Table 7: Dynamic
Symbol
Parameter
Test Conditions
Min. Typ. Max.
gfs (1) Forward Transconductance VDS = 15 V, ID=20 A
30
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
2500
510
78
td(on)
Turn-on Delay Time
VDD = 100 V, ID = 20 A,
20
tr
Rise Time
RG= 4.7 Ω VGS = 10 V
44
td(off)
Turn-off Delay Time
(Resistive Load see, Figure 17)
74
tr
Fall Time
22
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 160V, ID = 40 A,
VGS = 10V
75
13.2
35.5
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max.
ISD
Source-drain Current
40
ISDM (2) Source-drain Current (pulsed)
160
VSD (1) Forward On Voltage
ISD = 20 A, VGS = 0
1.5
trr
Reverse Recovery Time
ISD = 20 A, di/dt = 100A/µs
192
Qrr
Reverse Recovery Charge
VDD = 100V, Tj = 25°C
922
IRRM
Reverse Recovery Current (see test circuit, Figure 18)
9.6
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 18)
242
1440
11.9
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Unit
V
µA
µA
nA
V
Ω
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Unit
A
A
V
ns
nC
A
ns
nC
A
3/13
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