DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STPS3L40 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
STPS3L40
ST-Microelectronics
STMicroelectronics 
STPS3L40 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Characteristics
STPS3L40
Figure 9.
Relative variation of thermal
impedance junction to lead
versus pulse duration - SMB flat
Zth(j-l)/Rth(j-l)
1.0
SMB flat
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-04
1.E-03
tp(s)
1.E-02
1.E-01
1.E+00
1.E+01
Figure 10. Reverse leakage current versus
reverse voltage applied (typical
values)
IR(mA)
1.E+02
1.E+01
1.E+00
Tj=125°C
Tj=100°C
1.E-01
1.E-02
1.E-03
0
Tj=25°C
VR(V)
5
10
15
20
25
30
35
40
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
Figure 12. Forward voltage drop versus
forward current
IFM(A)
100
Tj=125°C
(typical values)
10
Tj=125°C
(maximum values)
1
Tj=25°C
(maximum values)
0
10
1
VR(V)
10
VFM(V)
0
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 13.
Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
board FR4, eCU=35µm)
Rth(j-a)(°C/W)
110
100
90
SMC
80
70
60
50
SMB flat
40
30
20
10
SCU(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
FIG 15A - WITHOUT EXPOSED PAD
4/8

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]