STS8DNF3LL Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción

Fabricante

STS8DNF3LL

Dual N-channel 30V - 0.017Ω - 8A SO-8 Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STS8DNF3LL

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS Breakdown voltage

Zero gate voltage

IDSS Drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

ID = 250 µA, VGS = 0

VDS = Max rating

VDS=Max rating,

TC=125°C

VGS = ± 16V

VDS = VGS, ID = 250µA

VGS = 10V, ID = 4A

VGS = 4.5V, ID = 4A

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 15V, ID= 4 A

VDS = 25V, f = 1 MHz,

VGS = 0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 15V, ID = 8A,

VGS = 5V

(see Figure 14)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.

Min. Typ. Max. Unit

30

V

1 µA

10 µA

±100 nA

1

V

0.017 0.020 Ω

0.020 0.024 Ω

Min. Typ. Max. Unit

12.5

S

800

pF

250

pF

60

pF

12.5 17 nC

3.2

nC

4.5

nC

Table 5. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Turn-off Delay Time

Fall Time

Test conditions

VDD=15 V, ID=4A,

RG=4.7Ω, VGS= 4.5V

(see Figure 13)

VDD=15 V, ID=4A,

RG=4.7Ω, VGS= 4.5V

(see Figure 13)

Min. Typ. Max. Unit

18

ns

32

ns

21

ns

11

ns

4/12

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