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STPS41L60CT データシートの表示(PDF) - STMicroelectronics

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STPS41L60CT
ST-Microelectronics
STMicroelectronics 
STPS41L60CT Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Document CD00002861 Revision 6.1
STPS41L60C
IN APPROVAL
6 / 12
Characteristics
Figure 2.
PF(av)(W)
16
14
12
10
8
6
4
2
0
0
Conduction losses versus
average current
Figure 3. Average forward current versus
ambient temperature (δ = 0.5)
δ=0.5
δ=1
IF(av)(A)
22
20
Rth(j-a)=Rth(j-c)
δ=0.2
18
16
δ=0.1
δ=0.05
14
12
10
T
8
T
6
4
Rth(j-a)=50 °C/W
δ=tp/T
tp
IF(av)(A)
δ=tp/T
tp
2
0
Tamb(°C)
5
10
15
20
25
0
25
50
75
100
125
150
Figure 4. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1 µs)
1
Figure 5.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(25 °C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.001
tp(µs)
0.2
Tj(°C)
0
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 6.
Non repetitive surge peak forward Figure 7.
current versus overload duration
(maximum values)
Relative variation of thermal
impedance junction to case versus
pulse duration
IM(A)
250
225
200
175
Zth(j-c)/Rth(j-c)
1.0
Single pulse
0.9
0.8
0.7
150
Tc=25 °C
0.6
125
0.5
100
Tc=75 °C
0.4
75
50
IM
25
0
1.E-03
t
δ =0.5
t(s)
1.E-02
1.E-01
Tc=125 °C
1.E+00
0.3
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
T
δ=tp/T
1.E-01
tp
1.E+00
Copyright STMicroelectronics
Doc ID 8616 Rev 6
Company Internal
3/9
Unauthorized reproduction and communication strictly prohibited

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