Electrical characteristics
STM32F405xx, STM32F407xx
Figure 36. PLL output clock waveforms in down spread mode
Frequency (PLL_OUT)
F0
2 x md
tmode
2 x tmode
5.3.12 Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Table 38. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
IDD
Supply current
Write / Erase 8-bit mode, VDD = 1.8 V
-
5
-
Write / Erase 16-bit mode, VDD = 2.1 V
-
8
-
Write / Erase 32-bit mode, VDD = 3.3 V
-
12
-
Time
ai17292
Unit
mA
Symbol
Table 39. Flash memory programming
Parameter
Conditions
Min(1) Typ Max(1) Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-
Program/erase parallelism
(PSIZE) = x 8
-
tERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
Program/erase parallelism
(PSIZE) = x 32
-
16 100(2) µs
400 800
300 600 ms
250 500
104/185
DocID022152 Rev 4