M45PE10-VMN6P データシートの表示（PDF） - STMicroelectronics

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M45PE10-VMN6P

1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

STMicroelectronics 

M45PE10

5

Memory organization

Memory organization

The memory is organized as:

● 512 pages (256 bytes each).

● 131,072 bytes (8 bits each)

● 2 sectors (512 Kbits, 65536 bytes each)

Each page can be individually:

● programmed (bits are programmed from 1 to 0)

● erased (bits are erased from 0 to 1)

● written (bits are changed to either 0 or 1)

The device is Page or Sector Erasable (bits are erased from 0 to 1).

Table 2. Memory organization

Sector

1

10000h

0

00000h

Address range

1FFFFh

0FFFFh

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