STPS2045CH データシートの表示（PDF） - STMicroelectronics
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STPS2045CH Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS2045CH
Table 2.
Symbol
Absolute ratings (limiting values, per diode)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
45
V
IF(RMS) Forward rms voltage
20
A
IF(AV) Average forward current δ = 0.5
Tc = 155 °C
Tc = 150 °C
Per diode
Per package
10
A
20
IFSM Surge non repetitive forward current
tp = 10 ms sine-wave
150
A
PARM(1) Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
280
W
VARM(2) Maximum repetitive peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A
60
V
VASM(2) Maximum single-pulse peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A
60
V
Tstg Storage temperature range
Tj Maximum operating junction temperature(3)
-65 to + 175 °C
+ 175
°C
1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements
and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. See Figure 8
3.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance parameters
Symbol
Parameter
Value
Unit
Rth (j-c) Junction to case
Rth (c) Coupling
Per diode
Total
2.50
°C/W
1.6
0.7
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
VF (2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 10 A
IF = 20 A
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.015 IF2(RMS)
100
µA
7
15
mA
0.5
0.57
0.84
V
0.65 0.72
2/7
Doc ID 023045 Rev 1
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