STM8S105K6U3C データシートの表示（PDF） - STMicroelectronics

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STM8S105K6U3C

Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I²C

STMicroelectronics 

STM8S105xx

Electrical characteristics

Symbol Parameter

Conditions

Min Typ Max

Unit

VIH

Input high level

voltage

Vhys

Hysteresis(1)

0.7 x

VDD

VDD + 0.3 V

V

700

mV

Rpu

Pull-up resistor VDD = 5 V, VIN = VSS

30 45

60

kΩ

tR, tF

Rise and fall

Fast I/Os load = 50 pF

time(10 % - 90 %)

Standard and high sink

I/OsLoad = 50 pF

20 (2)

ns

125 (2)

ns

Ilkg

Input leakage

VSS ≤ VIN ≤ VDD

current, analog

and digital

±1 (2)

µA

Ilkg ana Analog input

leakage current

VSS ≤ VIN ≤ VDD

±250 (2) nA

Ilkg(inj)

Leakage current in Injection current ±4 mA

adjacent I/O(2)

±1(2)

µA

(1) Hysteresis voltage between Schmitt trigger switching levels. Based on characterization

results, not tested in production.

(2) Data based on characterization results, not tested in production.

Figure 24: Typical VIL and VIH vs VDD @ 4 temperatures

DocID14771 Rev 9

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