STM32F100RB(2010) データシートの表示（PDF） - STMicroelectronics
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STM32F100RB
(Rev.:2010)
(Rev.:2010)
STMicroelectronics
STM32F100RB Datasheet PDF : 84 Pages
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STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
5.3.7
Internal clock source characteristics
The parameters given in Table 23 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
High-speed internal (HSI) RC oscillator
Table 23. HSI oscillator characteristics(1)(2)
Symbol
Parameter
Conditions
Min Typ Max Unit
fHSI Frequency
8
TA = –40 to 105 °C –2.7
ACCHSI Accuracy of HSI oscillator
TA = –10 to 85 °C
–2
TA = 0 to 70 °C
–2
TA = 25 °C
–0.7
tsu(HSI) HSI oscillator startup time
1
IDD(HSI) HSI oscillator power consumption
80
1. Guaranteed by design, not tested in production.
2. VDD = 3.3 V, TA = –40 to 105 °C °C unless otherwise specified.
MHz
3
%
2.5
%
2.5
%
1
%
2
µs
100 µA
Low-speed internal (LSI) RC oscillator
Table 24. LSI oscillator characteristics (1)
Symbol
Parameter
Min
fLSI
Frequency
30
tsu(LSI)(2) LSI oscillator startup time
IDD(LSI)(2) LSI oscillator power consumption
1. VDD = 3 V, TA = –40 to 105 °C °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
Typ
40
0.65
Max
Unit
60
kHz
85
µs
1.2
µA
Wakeup time from low-power mode
The wakeup times given in Table 25 are measured on a wakeup phase with an 8-MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
● Stop or Standby mode: the clock source is the RC oscillator
● Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under the ambient temperature and VDD supply
voltage conditions summarized in Table 8.
Table 25. Low-power mode wakeup timings
Symbol
Parameter
tWUSLEEP(1)
Wakeup from Sleep mode
Typ
Unit
1.8
µs
Doc ID 16455 Rev 2
49/84
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